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उत्पाद विवरण:
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| भाग संख्या: | IXTH200N10T | एफईटी प्रकार: | n- चैनल |
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| ड्रेन टू सोर्स वोल्टेज (Vdss): | 100 वी | वर्तमान - सतत नाली (आईडी) @ 25 डिग्री सेल्सियस: | 200ए (टीसी) |
| इनपुट कैपेसिटेंस (Ciss) (अधिकतम) @ Vds: | 9400 पीएफ @ 25 वी | बिजली अपव्यय (अधिकतम): | 550W (टीसी) |
| प्रमुखता देना: | 100V Power MOSFET,200A N-Channel MOSFET,TO-247-3 Trench Gate MOSFET |
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IXTH200N10T Integrated Circuit Chip 100V 200A N-Channel Trench Gate Power MOSFETs TO-247-3 Product Overview Of IXTH200 The IXTH200N10T is a 100V, 200A N-Channel Enhancement Mode Trench Gate Power MOSFET housed in a TO-247-3 package. It belongs to a series of high-current, low-on-resistance trench-gate power MOSFETs designed for demanding power switching applications, including switch-mode power supplies, motor drives, inverters, DC-DC converters, and welding machines.
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