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उत्पाद विवरण:
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| Part Number: | IRFP90N20DPBF | Vds - Drain-Source Breakdown Voltage: | 200 V |
|---|---|---|---|
| Id - Continuous Drain Current: | 94 A | Rds On - Drain-Source Resistance: | 23 mOhms |
| Qg - Gate Charge: | 180 nC | Pd - Power Dissipation: | 580 W |
| प्रमुखता देना: | 200V Drain-Source Voltage Power MOSFET,94A Continuous Drain Current MOSFET Transistor,23mOhm Drain-Source Resistance N-Channel MOSFET |
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IRFP90N20DPBF is a 200V, Single N-Channel Power MOSFET Transistor in a TO-247 package. This component supports various applications including DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications. Available in both surface mount and through-hole packages with industry standard footprints for design flexibility.
| Series | HEXFET® |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 94A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 56A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 6040 pF @ 25 V |
| Power Dissipation (Max) | 580W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
| Package / Case | TO-247-3 |
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व्यक्ति से संपर्क करें: Sales Manager
दूरभाष: 86-13410018555
फैक्स: 86-0755-83957753
