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कंपनी ब्लॉग के बारे में Original ST STW48NM60N 600V, 44A MDmesh II N-Channel Power MOSFET Transistors

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चीन ShenZhen Mingjiada Electronics Co.,Ltd. प्रमाणपत्र
चीन ShenZhen Mingjiada Electronics Co.,Ltd. प्रमाणपत्र
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मैं अब ऑनलाइन चैट कर रहा हूँ
कंपनी ब्लॉग
Original ST STW48NM60N 600V, 44A MDmesh II N-Channel Power MOSFET Transistors
के बारे में नवीनतम कंपनी की खबर Original ST STW48NM60N 600V, 44A MDmesh II N-Channel Power MOSFET Transistors

Original ST STW48NM60N 600V, 44A MDmesh II N-Channel Power MOSFET Transistors

 

Shenzhen Mingjiada Electronics Co., Ltd. — Long-term supplier of ST (STW48NM60N) 600V, MDmesh™ II N-channel power MOSFET transistors. Below are the product details for the STW48NM60N:
 
As a renowned electronic component supplier, Mingjiada Electronics provides customers with the STW48NM60N high-performance power MOSFET transistor manufactured by STMicroelectronics. This N-channel MOSFET employs advanced MDmesh™ II technology, delivering exceptional switching performance and low conduction losses. It plays a vital role in power management, industrial automation, and renewable energy applications.
 
Product Overview
The STW48NM60N is a high-performance N-channel power MOSFET from STMicroelectronics, manufactured using advanced MDmesh™ II technology. This MOSFET is housed in a TO-247-3 package, suitable for through-hole mounting.
The STW48NM60N, supplied by Mingjiada Electronics, is specifically designed for high-voltage, high-current applications. It offers outstanding switching characteristics and low on-resistance, significantly reducing power losses and enhancing system efficiency.
 
Specifications
To provide a comprehensive understanding of the STW48NM60N's technical characteristics, the following table outlines its key specifications:
Voltage Characteristics:
Drain-Source Voltage (Vdss): 600 V
Gate-Source Voltage (Vgs): ±25 V Maximum
Threshold Voltage (Vgs(th)): 2–4 V @ 250µA
Current Characteristics Continuous Drain Current (Id): 44 A @ 25°C (Tc)
Pulse Drain Current: 48 A
Resistance Characteristics:
On-Resistance (Rds(on)): 70 mΩ @ 20A, 10V
Typical On-Resistance: 55 mΩ @ 10V
Capacitance Characteristics Gate Charge (Qg): 124 nC @ 10V
Input capacitance (Ciss): 4285 pF @ 50V
Power characteristics:
Maximum power dissipation: 255 W
Maximum power dissipation: 330 W (Tc)
Other characteristics
Operating junction temperature: -55°C to +150°C
Package type: TO-247-3 Through-hole mounting
 
STW48NM60N Product Features
Superior Switching Performance: The STW48NM60N exhibits rapid switching speeds with a rise time of just 18ns and a fall time of 25.5ns. This makes it highly suitable for high-frequency switching applications, significantly reducing switching losses and enhancing system efficiency.
Low On-Resistance: The STW48NM60N exhibits a typical on-resistance of just 0.055Ω[@citation:6], with a maximum value of 0.07Ω[@citation:1]. This low on-resistance ensures minimal power dissipation during high-current transmission, reducing thermal management requirements.
High-reliability design: The STW48NM60N undergoes 100% avalanche testing, guaranteeing sustained high performance and reliability in harsh operating environments. Its wide operating temperature range (-55°C to +150°C) enables adaptation to diverse demanding conditions.
Low Gate Charge: The STW48NM60N features a gate charge (Qg) of just 124nC (@ 10V), indicating low drive losses. This permits efficient operation using smaller, more cost-effective drivers, thereby reducing system costs.
 
Application Areas
The STW48NM60N finds extensive application across multiple sectors due to its high-performance characteristics:
Switching Power Supplies (SMPS): The STW48NM60N is suitable for high-voltage switching power supplies (SMPS), including industrial power supplies, telecommunications power supplies, and uninterruptible power supply (UPS) systems. Its low on-resistance significantly reduces heat generation and power dissipation during power conversion, thereby enhancing power supply efficiency.
Inverter Systems: The STW48NM60N is exceptionally well-suited for inverter applications, including solar inverters, electric vehicle charging inverters, and wind power inverters. Its high voltage rating (600V) and substantial current-carrying capacity (44A) enable it to withstand high-power current loads.
Power Management Systems: The STW48NM60N is frequently employed in power management systems, delivering higher efficiency and lower power consumption through efficient current transfer and low on-resistance.
Electric Vehicles and Hybrids: Within electric vehicles and hybrid vehicles, the STW48NM60N is suitable for battery management systems and motor drive control. Its high voltage rating and high current handling capability make it exceptionally well-suited for these applications.
Industrial Power Systems: The STW48NM60N can be employed in various industrial power applications, including industrial automation systems, motor drives, and power conversion systems.
 
STW48NM60N is a high-performance N-channel power MOSFET utilising MDmesh™ II technology, offering advantages such as high voltage rating, low on-resistance, fast switching speed, and low gate charge. Whether in switching power supplies, inverter systems, power management systems, or electric vehicle applications, the STW48NM60N delivers reliable performance and efficient power handling capabilities.
 
Supply Information
Mingjiada Electronics offers the STW48NM60N power MOSFET transistor from STMicroelectronics as a stock item. Authentic chips are available from our current inventory to meet immediate customer requirements. Multiple ordering channels are provided: customers may request quotations via our website, or contact us by telephone or email.
पब समय : 2025-09-18 14:53:31 >> समाचार सूची
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